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The entrapment of tritium is particularly apt in this application as it is readily substituted for the hydrogen present in hydrogenated amorphous semiconductors with good intrinsic electronic properties. Radioisotopes other than tritium, may also be used as a source of energetic electrons as well as other forms of energetic nuclear radiation such as krypton-85 for example. Tritiated amophous films are mechanically stable, free for flaking or blistering, with good adherence to the substrate and may be simultaneously deposited onto both conducting and insulating substrates and may be simultaneously deposited onto both conducting and insulating substrates using a discharge in tritium plasma. The silicon layer sputtered in a tritium/argon ambient at temperatures below 300'C results in a tritiated amorphous silicon film with the tritium concentration being variable from 5 to 30% depending upon deposition conditions. See patent #4,835,433.

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